RF Power Amplifier Applications Intern

GaN RF Power Amplifier

Intern

Job Description

• The engineering intern
• will be working at the Morgan Hill CA Design Center alongside a highly
• knowledgeable team of RF engineers and will initially be tasked with device
• characterization of MACOM’s high power GaN transistor products geared towards Base
• Station market. As an intern you will learn to operate the RF test bench
• software and Digital Predistortion testers, handling RF devices, biasing
• devices, capturing accurate RF data, and performing a limited amount of data
• processing. This device characterization activity will be in support of current
• product development and R&D activities.
• A follow-on activity
• will task the intern to design an impedance matching network for a GaN device,
• using either MWO or ADS design software, in order to match the device to a 50
• ohm environment. The intern will be expected to layout the impedance matching
• network in AutoCAD, have it fabricated and will be tasked to assemble, solder components,
• and tune the circuit on the RF bench.

During the 12 weeks each Intern will

• >Be given an individual and well-defined project with set outcome goals
• >Gain hands on experience
• >Receive excellent training and ongoing supervision
• >Be invited to attend an intern webinar series
• >Attend networking/social events
• >Attend and present at Poster Session about each Interns project successes and pitfalls
• >Receive formal, written feedback